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MMRF1316NR1
MMRF1316NR1
RF FETs MMRF1316NR1
NXP
MMRF1316NR1
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1316NR1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width9.07(Max)
Package Height2.64(Max)
Package Length17.58(Max)
Output Power (W)361(Typ)
Supplier PackageTO-270 WB EP
Maximum IDSS (uA)10
Mode of OperationPulse
Process TechnologyLDMOS
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)600
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)27
Typical Drain Efficiency (%)71
Maximum Power Dissipation (mW)909000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Gate Threshold Voltage (V)2.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Input Capacitance @ Vds (pF)168@50V
Typical Output Capacitance @ Vds (pF)63@50V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)1.4@50V
Description
Trans RF FET N-CH 133V 4-Pin TO-270 WB EP T/R
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