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MMRF5014HR5
MMRF5014HR5
RF FETs MMRF5014HR5
NXP
MMRF5014HR5
--
Diodes, Transistors and Thyristors
RF FETs
MMRF5014HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialGaN
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Maximum VSWR20
ConfigurationSingle
Package Width5.97(Max)
Package Height4.45(Max)
Package Length20.45(Max)
Output Power (W)125(Typ)
Supplier PackageNI-360H-2SB
Maximum IDSS (uA)5000
Mode of OperationCW
Process TechnologyHEMT
Maximum Frequency (MHz)2700
Minimum Frequency (MHz)1
Typical Power Gain (dB)18
Number of Elements per Chip1
Typical Drain Efficiency (%)66.8
Maximum Power Dissipation (mW)232000
Maximum Gate Source Voltage (V)0
Maximum Drain Source Voltage (V)125
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Input Capacitance @ Vds (pF)51@50V
Typical Output Capacitance @ Vds (pF)7.7@50V
Typical Reverse Transfer Capacitance @ Vds (pF)1@50V
Description
Trans RF FET 125V Medical 3-Pin NI-360H-2SB T/R
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