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MRF6P27160HR5
MRF6P27160HR5
RF FETs MRF6P27160HR5
NXP
MRF6P27160HR5
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height5.08(Max)
Package Length41.28(Max)
Output Power (W)35(Typ)
Supplier PackageNI-1230
Mode of Operation1-Carrier N-CDMA
Maximum Frequency (MHz)2700
Minimum Frequency (MHz)2600
Typical Power Gain (dB)14.6
Number of Elements per Chip1
Typical Drain Efficiency (%)22.6
Maximum Power Dissipation (mW)603000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Reverse Transfer Capacitance @ Vds (pF)2.8@28V
Description
Trans RF MOSFET N-CH 68V 5-Pin NI-1230 T/R
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