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MRF6S19060NR1
MRF6S19060NR1
RF FETs MRF6S19060NR1
NXP
MRF6S19060NR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle Dual Drain Dual Gate
Package Width9.07(Max)
Package Height2.64(Max)
Package Length17.58(Max)
Output Power (W)60
Supplier PackageTO-270 W
Mode of Operation2-Carrier N-CDMA
Standard Package NameTO-270 W
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1990
Minimum Frequency (MHz)1930
Typical Power Gain (dB)16
Number of Elements per Chip1
Typical Drain Efficiency (%)26
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Reverse Transfer Capacitance @ Vds (pF)1.5@28V
Description
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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