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MRF7S16150HR3
MRF7S16150HR3
RF FETs MRF7S16150HR3
NXP
MRF7S16150HR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)32(Typ)
Supplier PackageNI-780
Mode of Operation1-Carrier OFDM|WIMAX
Maximum Frequency (MHz)1700
Minimum Frequency (MHz)1600
Typical Power Gain (dB)19.7
Number of Elements per Chip1
Typical Drain Efficiency (%)25.4
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)363@28V
Typical Output Capacitance @ Vds (pF)585@28V
Typical Reverse Transfer Capacitance @ Vds (pF)1.09@28V
Description
Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
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