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MRF7S24250NR3
MRF7S24250NR3
RF FETs MRF7S24250NR3
NXP
MRF7S24250NR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.83(Max)
Package Height3.86(Max)
Package Length20.62(Max)
Output Power (W)319
Supplier PackageOM-780 EP
Maximum IDSS (uA)2
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)2450
Minimum Frequency (MHz)2400
Typical Power Gain (dB)14.7
Number of Elements per Chip1
Typical Drain Efficiency (%)49
Maximum Power Dissipation (mW)769
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)1.2(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)4.3@32V
Description
Trans RF FET N-CH 65V Medical 3-Pin OM-780 EP T/R
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