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MRF8S18210WGHSR3
MRF8S18210WGHSR3
RF FETs MRF8S18210WGHSR3
NXP
MRF8S18210WGHSR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length23.24(Max)
Output Power (W)50(Typ)
Supplier PackageNI-880XS
Maximum IDSS (uA)5
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)1995
Minimum Frequency (MHz)1805
Typical Power Gain (dB)17.8
Number of Elements per Chip1
Typical Drain Efficiency (%)29.2
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 3-Pin NI-880XS T/R
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