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MRF8S21100HR3
MRF8S21100HR3
RF FETs MRF8S21100HR3
NXP
MRF8S21100HR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)24(Typ)
Supplier PackageCase 465-06
Mode of Operation1-Carrier W-CDMA
Standard Package NameCase 465-06
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)18.3
Number of Elements per Chip1
Typical Drain Efficiency (%)33.4
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Description
Trans RF FET N-CH 65V 3-Pin Case 465-06 T/R
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