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MRF8S8260HSR3
MRF8S8260HSR3
RF FETs MRF8S8260HSR3
NXP
MRF8S8260HSR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR7
ConfigurationSingle
Package Width13.8(Max)
Package Height5.08(Max)
Package Length23.24(Max)
Output Power (W)70(Typ)
Supplier PackageCase 465C-03
Mode of Operation1-Carrier W-CDMA
Maximum Frequency (MHz)895
Minimum Frequency (MHz)790
Typical Power Gain (dB)21.1
Number of Elements per Chip1
Typical Drain Efficiency (%)37.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)70
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Description
Trans RF MOSFET N-CH 70V 3-Pin Case 465C-03 T/R
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