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RF FETs MRFE6VP6600GNR3
NXP
MRFE6VP6600GNR3
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| Type | MOSFET |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Pin Count | 4 |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 65 |
| Output Power (W) | 600(Typ) |
| Mode of Operation | Pulse |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 600 |
| Minimum Frequency (MHz) | 1.8 |
| Typical Power Gain (dB) | 24.7 |
| Typical Drain Efficiency (%) | 73.5 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Drain Source Voltage (V) | 133 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Typical Forward Transconductance (S) | 28 |
| Typical Input Capacitance @ Vds (pF) | 290@50V |
| Typical Output Capacitance @ Vds (pF) | 98@50V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.4@50V |
| Description |
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