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PD55003
PD55003
RF FETs PD55003
STMicroelectronics
PD55003
--
Diodes, Transistors and Thyristors
RF FETs
PD55003.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Min)
ConfigurationSingle
Package Width9.4
Package Height3.5
Package Length9.5
Output Power (W)3(Min)
Supplier PackagePowerSO-10RF (Formed lead)
Process TechnologyLDMOS
Standard Package NamePowerSO-10RF (Formed lead)
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1000
Typical Power Gain (dB)17
Number of Elements per Chip1
Typical Drain Efficiency (%)52
Maximum Power Dissipation (mW)31700
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)165
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2.5
Typical Forward Transconductance (S)1
Typical Input Capacitance @ Vds (pF)36@12.5V
Typical Output Capacitance @ Vds (pF)24@12.5V
Typical Reverse Transfer Capacitance @ Vds (pF)2.4@12.5V
Description
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead)
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