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PD85004
PD85004
RF FETs PD85004
STMicroelectronics
PD85004
--
Diodes, Transistors and Thyristors
RF FETs
PD85004.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Min)
ConfigurationSingle Dual Source
Package Width2.6(Max)
Package Height1.6(Max)
Package Length4.6(Max)
Output Power (W)5(Typ)
Supplier PackageSOT-89
Process TechnologyLDMOS
Standard Package NameSOT-89
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1000
Typical Power Gain (dB)17
Number of Elements per Chip1
Typical Drain Efficiency (%)65
Maximum Power Dissipation (mW)6000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)16@13.6V
Typical Output Capacitance @ Vds (pF)14@13.6V
Typical Reverse Transfer Capacitance @ Vds (pF)1.1@13.6V
Description
Trans RF FET N-CH 40V 2A 4-Pin(3+Tab) SOT-89 T/R
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