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PMBFJ309,215
PMBFJ309,215
RF FETs PMBFJ309,215
NXP
PMBFJ309,215
--
Diodes, Transistors and Thyristors
RF FETs
PMBFJ309,215.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
SVHCYes
TypeJFET
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveUnknown
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageTO-236AB
Standard Package NameSOT-23
Number of Elements per Chip1
Maximum Power Dissipation (mW)250
Maximum Gate Source Voltage (V)-25
Maximum Drain Source Voltage (V)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)6@10V
Maximum Drain Source Resistance (mOhm)50000(Typ)@0V
Description
Trans RF FET N-CH 25V Automotive 3-Pin TO-236AB T/R
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