Product Attribute | Attribute Value |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Wafer |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Maximum VSWR | 5 |
Configuration | Dual Common Source |
Output Power (W) | 300 |
Mode of Operation | 2-Tone|ATSC 8VSB |
Process Technology | LDMOS |
Maximum Frequency (MHz) | 860 |
Minimum Frequency (MHz) | 470 |
Typical Power Gain (dB) | 17.5 |
Number of Elements per Chip | 2 |
Typical Drain Efficiency (%) | 41 |
Maximum Power Dissipation (mW) | 761000 |
Maximum Gate Source Voltage (V) | 12 |
Maximum Drain Source Voltage (V) | 65 |
Maximum Operating Temperature (°C) | 200 |
Minimum Operating Temperature (°C) | -40 |
Maximum Drain Source Resistance (MOhm) | 80(Typ)@10V |
Description |