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PTFB192503FLV2XWSA1
PTFB192503FLV2XWSA1
RF FETs PTFB192503FLV2XWSA1
Infineon
PTFB192503FLV2XWSA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.78
Package Height4.04
Package Length23.11
Output Power (W)240
Supplier PackageCase 34288-4/2
Mode of Operation2-Carrier W-CDMA|2-Tone|CW
Process TechnologyLDMOS
Maximum Frequency (MHz)1990
Minimum Frequency (MHz)1930
Typical Power Gain (dB)19
Number of Elements per Chip1
Typical Drain Efficiency (%)41.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (MOhm)30(Typ)@10V
Description
Trans RF MOSFET N-CH 65V 5-Pin Case 34288-4/2 Tray
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