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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PTVA127002EV V1
PTVA127002EV V1
RF FETs PTVA127002EV V1
Infineon
PTVA127002EV V1
--
Diodes, Transistors and Thyristors
RF FETs
PTVA127002EV V1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Source
Package Width10.16
Package Height4.58
Package Length41.15
Output Power (W)703(Typ)
Supplier PackageCase 36275
Maximum IDSS (uA)10
Mode of OperationPulsed RF
Process TechnologyLDMOS
Typical Rise Time (ns)5
Maximum Frequency (MHz)1400
Minimum Frequency (MHz)1200
Typical Power Gain (dB)16
Number of Elements per Chip2
Typical Drain Efficiency (%)54
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)105
Typical Turn-Off Delay Time (ns)2
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (MOhm)100(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 105V 5-Pin Case 36275 Tray
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