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RF2L16080CF2
RF2L16080CF2
RF FETs RF2L16080CF2
STMicroelectronics
RF2L16080CF2
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Diodes, Transistors and Thyristors
RF FETs
RF2L16080CF2.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Maximum VSWR10
ConfigurationSingle
Package Width10.16
Package Height3.56
Package Length10.16
Output Power (W)80(Typ)
Supplier PackageCase A2
Maximum IDSS (uA)1
Mode of OperationPulsed CW
Process TechnologyLDMOS
Maximum Frequency (MHz)1700
Minimum Frequency (MHz)1300
Typical Power Gain (dB)18
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Typical Drain Efficiency (%)57
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (mOhm)1000@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans RF MOSFET 65V 3-Pin Case A2 T/R
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