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SD4933MR
SD4933MR
RF FETs SD4933MR
STMicroelectronics
SD4933MR
--
Diodes, Transistors and Thyristors
RF FETs
SD4933MR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Typ)
ConfigurationSingle Triple Source
Package Width16.13(Max)
Package Height7.87(Max)
Package Length28.96(Max)
Output Power (W)300(Min)
Supplier PackageCase M-177MR
Maximum IDSS (uA)2000
Process TechnologyDMOS
Maximum Frequency (MHz)100
Typical Power Gain (dB)24
Number of Elements per Chip1
Typical Drain Efficiency (%)58
Maximum Power Dissipation (mW)648000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)200
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)40
Typical Forward Transconductance (S)8
Typical Input Capacitance @ Vds (pF)1000@50V
Typical Output Capacitance @ Vds (pF)400@50V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)16@50V
Description
Trans RF MOSFET N-CH 200V 40A 5-Pin Case M-177MR Loose
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