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SD56060
SD56060
RF FETs SD56060
STMicroelectronics
SD56060
--
Diodes, Transistors and Thyristors
RF FETs
SD56060.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5(Min)
ConfigurationDual Common Source
Package Width5.97(Max)
Package Height5.08(Max)
Package Length29.08(Max)
Output Power (W)60(Min)
Supplier PackageCase M-246
Maximum IDSS (uA)1
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Minimum Frequency (MHz)1
Typical Power Gain (dB)16
Number of Elements per Chip1
Typical Drain Efficiency (%)60
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)58@28V
Typical Output Capacitance @ Vds (pF)34@28V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)2.7@28V
Description
Trans RF MOSFET N-CH 65V 8A 5-Pin Case M-246 Loose
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