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SD56120M
SD56120M
RF FETs SD56120M
STMicroelectronics
SD56120M
--
Diodes, Transistors and Thyristors
RF FETs
SD56120M.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10(Min)
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height5.33(Max)
Package Length22.05(Max)
Output Power (W)120(Min)
Supplier PackageCase M-252
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Typical Power Gain (dB)16
Number of Elements per Chip2
Typical Drain Efficiency (%)50(Min)
Maximum Power Dissipation (mW)236000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)221@28V
Typical Output Capacitance @ Vds (pF)48.9@28V
Typical Reverse Transfer Capacitance @ Vds (pF)2.25@28V
Description
Trans RF MOSFET N-CH 65V 14A 5-Pin Case M-252 Tube
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