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SMMBFJ309LT1G
SMMBFJ309LT1G
RF FETs SMMBFJ309LT1G
onsemi
SMMBFJ309LT1G
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
TypeJFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Supplier PackageSOT-23
Maximum IDSS (uA)30000
Standard Package NameSOT
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)225
Maximum Gate Source Voltage (V)25
Maximum Drain Source Voltage (V)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Forward Transconductance (S)0.018(Max)
Typical Input Capacitance @ Vds (pF)5(Max)@0V
Maximum Gate Source Leakage Current (nA)1
Typical Reverse Transfer Capacitance @ Vds (pF)2.5(Max)@0V
Description
Trans RF FET N-CH 25V Automotive 3-Pin SOT-23 T/R
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