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RF FETs ST16010
STMicroelectronics
ST16010
--
Diodes, Transistors and Thyristors
RF FETs
ST16010.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveNo
PCB changed2
Part StatusActive
Maximum VSWR20
ConfigurationSingle
Package Width4.06
Package Height2.32
Package Length5.08
Output Power (W)12
Supplier PackageMM
Process TechnologyLDMOS
Maximum Frequency (MHz)1600
Typical Power Gain (dB)21
Number of Elements per Chip1
Typical Drain Efficiency (%)63
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)90
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)1
Typical Input Capacitance @ Vds (pF)15
Typical Output Capacitance @ Vds (pF)5.7
Typical Reverse Transfer Capacitance @ Vds (pF)0.4
Description
Trans RF FET 90V 2-Pin MM T/R
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