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U309-E3
U309-E3
RF FETs U309-E3
Vishay
U309-E3
--
Diodes, Transistors and Thyristors
RF FETs
U309-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeJFET
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width5.84(Max)
Package Height3.81(Max)
Package Length5.84(Max)
Supplier PackageTO-52
Maximum IDSS (uA)30000
Standard Package NameTO-52
Typical Power Gain (dB)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum Gate Source Voltage (V)-25
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)0.014
Typical Input Capacitance @ Vds (pF)4@10V
Maximum Drain Source Resistance (mOhm)35000(Typ)
Maximum Gate Source Leakage Current (nA)1
Typical Reverse Transfer Capacitance @ Vds (pF)1.9@10V
Description
Trans RF FET N-CH 3-Pin TO-52
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