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CY62146GE30-45BVXIT
CY62146GE30-45BVXIT
SRAM Chip CY62146GE30-45BVXIT
Cypress
CY62146GE30-45BVXIT
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Memory
SRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.41
ECCN (US)3A991
Timing TypeAsynchronous
Number of Ports1
Number of Words256K
Chip Density (bit)4M
Process Technology65nm, CMOS
Max. Access Time (ns)45
Data Rate ArchitectureSDR
Operating Current (mA)20
Address Bus Width (bit)18
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.2
Typical Operating Supply Voltage (V)2.5|3|3.3
Description
SRAM Chip Async Single 2.5V/3V/3.3V 4M-bit 256K x 16 45ns
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