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SRAM Chip K6R4016V1D-EI10000
Samsung Electronics
K6R4016V1D-EI10000
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Memory
SRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Surface Mount |
| ECCN (US) | 3A991.b.2.a |
| Packaging | Tray |
| Pin Count | 48 |
| Automotive | No |
| Lead Shape | Ball |
| PCB changed | 48 |
| Part Status | Obsolete |
| Timing Type | Asynchronous |
| Package Width | 7 |
| Package Height | 0.55 |
| Package Length | 9 |
| Number of Ports | 1 |
| Number of Words | 256K |
| Supplier Package | TBGA |
| Chip Density (bit) | 4M |
| Max. Access Time (ns) | 10 |
| Standard Package Name | BGA |
| Data Rate Architecture | SDR |
| Operating Current (mA) | 75 |
| Address Bus Width (bit) | 18 |
| Number of Bits/Word (bit) | 16 |
| Supplier Temperature Grade | Industrial |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Minimum Operating Supply Voltage (V) | 3 |
| Typical Operating Supply Voltage (V) | 3.3 |
| Description |
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