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K6T4008U1C-YF10T00
K6T4008U1C-YF10T00
SRAM Chip K6T4008U1C-YF10T00
Samsung Electronics
K6T4008U1C-YF10T00
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Memory
SRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
ECCN (US)3A991.b.2.a
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Timing TypeAsynchronous
Number of Ports1
Number of Words512K
Chip Density (bit)4M
Max. Access Time (ns)100
Data Rate ArchitectureSDR
Operating Current (mA)30
Address Bus Width (bit)19
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.3
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3
Description
SRAM Chip Async Single 3V 4M-bit 512K x 8 100ns 32-Pin TSOP-I T/R
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