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Silicon Controlled Rectifiers - SCRs TN2010H-6I
STMicroelectronics
TN2010H-6I
--
Diodes, Transistors and Thyristors
Silicon Controlled Rectifiers - SCRs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Package Width | 4.6(Max) |
| Phase Control | No |
| Package Height | 9.3(Max) |
| Package Length | 10.4(Max) |
| Supplier Package | TO-220AB Insulated |
| RMS On-State Current (A) | 20 |
| Surge Current Rating (A) | 197 |
| Peak On-State Voltage (V) | 1.6@40A |
| Maximum Holding Current (mA) | 40 |
| Maximum Latching Current (mA) | 60 |
| Maximum Gate Trigger Voltage (V) | 1.3 |
| Maximum Gate Trigger Current (mA) | 10 |
| Average Gate Power Dissipation (W) | 1 |
| Rated Average On-State Current (A) | 13 |
| Circuit Fusing Consideration (A²S) | 162 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Repetitive Peak Reverse Voltage (V) | 600 |
| Maximum Gate Peak Inverse Voltage (V) | 5 |
| Repetitive Peak Off-State Current (mA) | 0.005 |
| Repetitive Peak Forward Blocking Voltage (V) | 600 |
| Maximum Rate of Rise of On-State Current (A/us) | 100 |
| Maximum Rate of Rise of Off-State Voltage (V/us) | 400(Min) |
| Description |
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