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4N35TVM
4N35TVM
Transistor and Photovoltaic Output Photocouplers 4N35TVM
onsemi
4N35TVM
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Optoelectronics
Transistor and Photovoltaic Output Photocouplers
4N35TVM.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingThrough Hole
StandardUL|VDE
ECCN (US)EAR99
PackagingBag
Pin Count6
AutomotiveNo
Input TypeDC
Lead ShapeWide Lead Spacing Through Hole
Output TypeDC
PCB changed6
Part StatusActive
Output DeviceTransistor With Base
Package Width6.6(Max)
Package Height3.53(Max)
Package Length8.89(Max)
Supplier PackagePDIP White
Standard Package NameDIP
Maximum Forward Voltage (V)1.5
Maximum Reverse Voltage (V)6
Number of Channels per Chip1
Typical Forward Voltage (V)1.18
Maximum Forward Current (mA)60
Maximum Power Dissipation (mW)250
Minimum Isolation Voltage (Vrms)4170
Minimum Current Transfer Ratio (%)100
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)30
Current Transfer Ratio Test Current (mA)10
Maximum Collector-Emitter Saturation Voltage (mV)300
Description
DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP White Bag
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