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Transistor and Photovoltaic Output Photocouplers H11B1VM
onsemi
H11B1VM
--
Optoelectronics
Transistor and Photovoltaic Output Photocouplers
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| Standard | UL|cUL|VDE |
| ECCN (US) | EAR99 |
| Packaging | Bag |
| Pin Count | 6 |
| Automotive | No |
| Input Type | DC |
| Lead Shape | Through Hole |
| Output Type | DC |
| PCB changed | 6 |
| Part Status | Active |
| Output Device | Darlington With Base |
| Package Width | 6.6(Max) |
| Package Height | 3.53(Max) |
| Package Length | 8.89(Max) |
| Supplier Package | PDIP |
| Standard Package Name | DIP |
| Maximum Forward Voltage (V) | 1.5 |
| Maximum Reverse Voltage (V) | 3 |
| Minimum Forward Voltage (V) | 0.8 |
| Number of Channels per Chip | 1 |
| Typical Forward Voltage (V) | 1.2 |
| Maximum Forward Current (mA) | 80 |
| Maximum Collector Current (mA) | 150 |
| Maximum Power Dissipation (mW) | 250 |
| Minimum Isolation Voltage (Vrms) | 4170 |
| Minimum Current Transfer Ratio (%) | 500 |
| Maximum Operating Temperature (°C) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Current Transfer Ratio Test Current (mA) | 1 |
| Maximum Collector-Emitter Saturation Voltage (mV) | 1000 |
| Description |
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