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DRAM Chip EDB8164B4PR-1D-F-R
Micron Technology
EDB8164B4PR-1D-F-R
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| DRAM Type | Mobile LPDDR2 SDRAM |
| ECCN (US) | EAR99 |
| Automotive | No |
| Part Status | Obsolete |
| Organization | 128Mx64 |
| Chip Density (bit) | 8G |
| Data Bus Width (bit) | 64 |
| Operating Current (mA) | 260 |
| Address Bus Width (bit) | 14 |
| Maximum Access Time (ns) | 5.5 |
| Maximum Clock Rate (MHz) | 533 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 16M |
| Number of Bits/Word (bit) | 64 |
| Number of I/O Lines (bit) | 64 |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -30 |
| Maximum Operating Supply Voltage (V) | 1.95|1.3 |
| Minimum Operating Supply Voltage (V) | 1.14|1.7 |
| Typical Operating Supply Voltage (V) | 1.2|1.8 |
| Description |
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