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K4A4G085WE-BIRC
K4A4G085WE-BIRC
DRAM Chip K4A4G085WE-BIRC
Samsung Electronics
K4A4G085WE-BIRC
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.36
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR4 SDRAM
ECCN (US)EAR99
Pin Count78
AutomotiveNo
PCB changed78
Part StatusActive
Organization512Mx8
Package Width7.5
Interface TypePOD
Package Length11
Supplier PackageFBGA
Chip Density (bit)4G
Data Bus Width (bit)8
Operating Current (mA)90
Address Bus Width (bit)17
Maximum Access Time (ns)0.175
Maximum Clock Rate (MHz)2400
Number of Internal Banks16
Number of Words per Bank32M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.26
Minimum Operating Supply Voltage (V)1.14
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DDR4 SDRAM 4Gbit 512Mx8 1.2V 78-Pin FBGA
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