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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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K4A4G165WE-BCPBTCV
K4A4G165WE-BCPBTCV
DRAM Chip K4A4G165WE-BCPBTCV
Samsung Electronics
K4A4G165WE-BCPBTCV
--
Memory
DRAM Chip
K4A4G165WE-BCPBTCV.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR4 SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
Lead ShapeBall
PCB changed96
Part StatusActive
Organization256Mx16
Package Width7.5
Interface TypePOD
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)4G
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)118
Address Bus Width (bit)20
Maximum Access Time (ns)0.18
Maximum Clock Rate (MHz)2133
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.26
Minimum Operating Supply Voltage (V)1.14
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA
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