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K4A8G085WB-BCRC000
K4A8G085WB-BCRC000
DRAM Chip K4A8G085WB-BCRC000
Samsung Electronics
K4A8G085WB-BCRC000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.36
EU RoHSCompliant
DRAM TypeDDR4 SDRAM
ECCN (US)EAR99
Part StatusActive
Organization1Gx8
Interface TypePOD
Chip Density (bit)8G
Data Bus Width (bit)8
Operating Current (mA)107
Address Bus Width (bit)18
Maximum Clock Rate (MHz)1200
Number of Internal Banks16
Number of Words per Bank64M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.26
Minimum Operating Supply Voltage (V)1.14
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DDR4 SDRAM 8Gbit 1Gx8 1.2V 78-Pin FBGA
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