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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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K4A8G085WB-BCTDTCV
K4A8G085WB-BCTDTCV
DRAM Chip K4A8G085WB-BCTDTCV
Samsung Electronics
K4A8G085WB-BCTDTCV
--
Memory
DRAM Chip
K4A8G085WB-BCTDTCV.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR4 SDRAM
ECCN (US)EAR99
Pin Count78
AutomotiveNo
Lead ShapeBall
PCB changed78
Part StatusActive
Organization1Gx8
Package Width7.5
Interface TypePOD
Package Height0.73
Package Length11
Supplier PackageFBGA
Chip Density (bit)8G
Data Bus Width (bit)8
Standard Package NameBGA
Operating Current (mA)124
Address Bus Width (bit)18
Maximum Access Time (ns)0.17
Maximum Clock Rate (MHz)2666
Number of Internal Banks16
Number of Words per Bank64M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.26
Minimum Operating Supply Voltage (V)1.14
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DDR4 SDRAM 8Gbit 1Gx8 1.2V 78-Pin FBGA
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