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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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K4A8G165WB-BCRCTCV
K4A8G165WB-BCRCTCV
DRAM Chip K4A8G165WB-BCRCTCV
Samsung Electronics
K4A8G165WB-BCRCTCV
--
Memory
DRAM Chip
K4A8G165WB-BCRCTCV.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR4 SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
Lead ShapeBall
PCB changed96
Part StatusActive
Organization512Mx16
Package Width7.5
Interface TypePOD
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)8G
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)190.4
Address Bus Width (bit)18
Maximum Access Time (ns)0.175
Maximum Clock Rate (MHz)2400
Number of Internal Banks8
Number of Words per Bank64M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.26
Minimum Operating Supply Voltage (V)1.14
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA
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