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K4B1G1646I-BCNB
K4B1G1646I-BCNB
DRAM Chip K4B1G1646I-BCNB
Samsung Electronics
K4B1G1646I-BCNB
--
Memory
DRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.32
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
PCB changed96
Part StatusActive
Organization64Mx16
Package Width7.5
Interface TypeSSTL_1.5
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)1G
Data Bus Width (bit)16
Address Bus Width (bit)16
Maximum Clock Rate (MHz)2133
Number of Internal Banks8
Number of Words per Bank8M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin FBGA
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