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K4B1G1646I-BMMAT00
K4B1G1646I-BMMAT00
DRAM Chip K4B1G1646I-BMMAT00
Samsung Electronics
K4B1G1646I-BMMAT00
--
Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR3L SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
Lead ShapeBall
PCB changed96
Part StatusLTB
Organization64Mx16
Package Width7.5
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)1G
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)134
Address Bus Width (bit)16
Maximum Access Time (ns)0.195
Maximum Clock Rate (MHz)1866
Number of Internal Banks8
Number of Words per Bank8M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.45|1.575
Minimum Operating Supply Voltage (V)1.283|1.425
Typical Operating Supply Voltage (V)1.35|1.5
Description
DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V/1.5V 96-Pin FBGA
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