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K4B2G1646F-BCMA
K4B2G1646F-BCMA
DRAM Chip K4B2G1646F-BCMA
Samsung Electronics
K4B2G1646F-BCMA
--
Memory
DRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.36
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
Lead ShapeBall
PCB changed96
Part StatusLTB
Organization128Mx16
Package Width7.5
Interface TypeSSTL_1.5
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)2G
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)134
Address Bus Width (bit)17
Maximum Access Time (ns)0.195
Maximum Clock Rate (MHz)1866
Number of Internal Banks8
Number of Words per Bank16M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA
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