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K4B2G1646F-BMK0000
K4B2G1646F-BMK0000
DRAM Chip K4B2G1646F-BMK0000
Samsung Electronics
K4B2G1646F-BMK0000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.36
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR3L SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
Lead ShapeBall
PCB changed96
Part StatusActive
Organization128Mx16
Package Width7.5
Package Height0.73
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)2G
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)118
Address Bus Width (bit)17
Maximum Access Time (ns)0.225
Maximum Clock Rate (MHz)1600
Number of Internal Banks8
Number of Words per Bank16M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.45|1.575
Minimum Operating Supply Voltage (V)1.283|1.425
Typical Operating Supply Voltage (V)1.35|1.5
Description
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V/1.5V 96-Pin FBGA
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