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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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K4B4G1646D-BYH9TCV
K4B4G1646D-BYH9TCV
DRAM Chip K4B4G1646D-BYH9TCV
Samsung Electronics
K4B4G1646D-BYH9TCV
--
Memory
DRAM Chip
K4B4G1646D-BYH9TCV.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
Pin Count96
AutomotiveNo
Lead ShapeBall
PCB changed96
Part StatusActive
Organization256Mx16
Package Width7.5
Package Height0.75
Package Length13.3
Supplier PackageFBGA
Chip Density (bit)4G
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)103
Address Bus Width (bit)18
Maximum Access Time (ns)0.255
Maximum Clock Rate (MHz)1333
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.45|1.575
Minimum Operating Supply Voltage (V)1.425|1.283
Typical Operating Supply Voltage (V)1.35|1.5
Description
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V/1.5V 96-Pin FBGA
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