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K4B4G1646D-BYK0TCV
K4B4G1646D-BYK0TCV
DRAM Chip K4B4G1646D-BYK0TCV
Samsung Electronics
K4B4G1646D-BYK0TCV
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Organization256Mx16
Interface TypeSSTL_1.5
Chip Density (bit)4G
Data Bus Width (bit)16
Operating Current (mA)118
Address Bus Width (bit)18
Maximum Access Time (ns)0.225
Maximum Clock Rate (MHz)1600
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V
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