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DRAM Chip K4T51163QJ-BCE7000
Samsung Electronics
K4T51163QJ-BCE7000
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Surface Mount |
| DRAM Type | DDR2 SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 84 |
| Automotive | No |
| PCB changed | 84 |
| Part Status | Obsolete |
| Organization | 32Mx16 |
| Package Width | 7.5 |
| Interface Type | SSTL_1.8 |
| Package Length | 12.5 |
| Supplier Package | FBGA |
| Chip Density (bit) | 512M |
| Data Bus Width (bit) | 16 |
| Operating Current (mA) | 130 |
| Address Bus Width (bit) | 15 |
| Maximum Access Time (ns) | 0.4 |
| Maximum Clock Rate (MHz) | 800 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 8M |
| Number of Bits/Word (bit) | 16 |
| Number of I/O Lines (bit) | 16 |
| Supplier Temperature Grade | Commercial |
| Maximum Operating Temperature (°C) | 95 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Supply Voltage (V) | 1.9 |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Description |
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