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K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
DRAM Chip K4F6E3S4HM-MGCJ
Samsung Electronics
K4F6E3S4HM-MGCJ
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
HTS8542.32.00.36
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeMobile LPDDR4 SDRAM
ECCN (US)EAR99
Pin Count200
AutomotiveNo
PCB changed200
Part StatusActive
Organization512Mx32
Package Width10
Interface TypeLVSTL
Package Height0.68
Package Length15
Supplier PackageFBGA
Chip Density (bit)16G
Process TechnologyCMOS
Data Bus Width (bit)32
Operating Current (mA)435
Address Bus Width (bit)19
Maximum Access Time (ns)3.5
Maximum Clock Rate (MHz)3733
Number of Internal Banks8
Number of Words per Bank64M
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.17|1.95
Minimum Operating Supply Voltage (V)1.06|1.7
Typical Operating Supply Voltage (V)1.1|1.8
Description
DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin FBGA
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