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K4S161622D-TC8000
K4S161622D-TC8000
DRAM Chip K4S161622D-TC8000
Samsung Electronics
K4S161622D-TC8000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
DRAM TypeSDRAM
ECCN (US)EAR99
PackagingTape and Reel
Pin Count50
AutomotiveNo
Lead ShapeGull-wing
PCB changed50
Part StatusObsolete
Organization1Mx16
Package Width10.16
Interface TypeLVTTL
Package Height1
Package Length20.95
Supplier PackageTSOP-II
Chip Density (bit)16M
Process TechnologyCMOS
Data Bus Width (bit)16
Standard Package NameSOP
Operating Current (mA)130
Address Bus Width (bit)12
Maximum Access Time (ns)6
Maximum Clock Rate (MHz)125
Number of Internal Banks2
Number of Words per Bank512K
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)3
Typical Operating Supply Voltage (V)3.3
Description
DRAM Chip SDRAM 16Mbit 1Mx16 3.3V 50-Pin TSOP-II T/R
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