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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DRAM Chip K4T51163QJ-BCF7000
Samsung Electronics
K4T51163QJ-BCF7000
--
Memory
DRAM Chip
K4T51163QJ-BCF7000.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
Pin Count84
AutomotiveNo
Lead ShapeBall
PCB changed84
Part StatusObsolete
Organization32Mx16
Package Width7.5
Interface TypeSSTL_1.8
Package Height0.73
Package Length12.5
Supplier PackageFBGA
Chip Density (bit)512M
Data Bus Width (bit)16
Standard Package NameBGA
Operating Current (mA)130
Address Bus Width (bit)15
Maximum Access Time (ns)0.4
Maximum Clock Rate (MHz)800
Number of Internal Banks4
Number of Words per Bank8M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA
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