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K4T51163QN-BCE7TCV
K4T51163QN-BCE7TCV
DRAM Chip K4T51163QN-BCE7TCV
Samsung Electronics
K4T51163QN-BCE7TCV
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
Pin Count84
AutomotiveNo
PCB changed84
Part StatusObsolete
Organization32Mx16
Package Width7.5
Package Length12.5
Supplier PackageFBGA
Chip Density (bit)512M
Data Bus Width (bit)16
Number of Internal Banks4
Number of Words per Bank8M
Number of Bits/Word (bit)16
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA
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