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MT46H64M32LFCX-6 WT:B
MT46H64M32LFCX-6 WT:B
DRAM Chip MT46H64M32LFCX-6 WT:B
Micron Technology
MT46H64M32LFCX-6 WT:B
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeMobile LPDDR SDRAM
ECCN (US)EAR99
Pin Count90
AutomotiveNo
Lead ShapeBall
PCB changed90
Part StatusObsolete
Organization64Mx32
Package Width9
Interface TypeLVCMOS
Package Height0.55(Min)
Package Length13
Supplier PackageVFBGA
Chip Density (bit)2G
Data Bus Width (bit)32
Standard Package NameBGA
Operating Current (mA)140
Address Bus Width (bit)16
Maximum Access Time (ns)5|6.5
Maximum Clock Rate (MHz)166
Number of Internal Banks4
Number of Words per Bank16M
Number of Bits/Word (bit)32
Number of I/O Lines (bit)32
Supplier Temperature GradeWireless
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip Mobile LPDDR SDRAM 2Gbit 64Mx32 1.8V 90-Pin VFBGA
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