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MT49H8M36SJ-25:B TR
MT49H8M36SJ-25:B TR
DRAM Chip MT49H8M36SJ-25:B TR
Micron Technology
MT49H8M36SJ-25:B TR
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeRLDRAM
ECCN (US)EAR99
PackagingTray
Pin Count144
AutomotiveNo
Lead ShapeBall
PCB changed144
Part StatusActive
Organization8Mx36
Package Width11
Package Height0.7(Min)
Package Length18.5
Supplier PackageFBGA
Chip Density (bit)288M
Data Bus Width (bit)36
Standard Package NameBGA
Operating Current (mA)418
Address Bus Width (bit)24
Maximum Clock Rate (MHz)533
Number of Internal Banks8
Number of Words per Bank1M
Number of Bits/Word (bit)36
Number of I/O Lines (bit)36
Supplier Temperature GradeCommercial
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.9|2.63
Minimum Operating Supply Voltage (V)1.7|2.38
Typical Operating Supply Voltage (V)1.8|2.5
Description
DRAM Chip RLDRAM 288Mbit 8Mx36 1.8V/2.5V 144-Pin FBGA Tray
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