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DRAM Chip MT53B512M32D2NP-062 WT:C TR
Micron Technology
MT53B512M32D2NP-062 WT:C TR
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Surface Mount |
| DRAM Type | Mobile LPDDR4 SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 200 |
| Automotive | Unknown |
| PCB changed | 200 |
| Part Status | Obsolete |
| Organization | 512Mx32 |
| Supplier Package | WFBGA |
| Chip Density (bit) | 16G |
| Process Technology | CMOS |
| Data Bus Width (bit) | 32 |
| Operating Current (mA) | 395 |
| Address Bus Width (bit) | 18 |
| Maximum Access Time (ns) | 10 |
| Maximum Clock Rate (MHz) | 3200 |
| Number of Internal Banks | 16 |
| Number of Words per Bank | 32M |
| Number of Bits/Word (bit) | 32 |
| Number of I/O Lines (bit) | 32 |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -30 |
| Maximum Operating Supply Voltage (V) | 1.17 |
| Minimum Operating Supply Voltage (V) | 1.06 |
| Typical Operating Supply Voltage (V) | 1.1 |
| Description |
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