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DRAM Chip MT53E1G32D2FW-046 IT:B
Micron Technology
MT53E1G32D2FW-046 IT:B
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| DRAM Type | Mobile LPDDR4 SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 200 |
| Automotive | Unknown |
| PCB changed | 200 |
| Part Status | Active |
| Organization | 1Gx32 |
| Package Width | 10 |
| Interface Type | LVSTL |
| Package Height | 0.69 |
| Package Length | 14.5 |
| Supplier Package | TFBGA |
| Chip Density (bit) | 32G |
| Process Technology | CMOS |
| Data Bus Width (bit) | 32 |
| Standard Package Name | BGA |
| Operating Current (mA) | 400 |
| Address Bus Width (bit) | 19 |
| Maximum Access Time (ns) | 3.5 |
| Maximum Clock Rate (MHz) | 4266 |
| Number of Internal Banks | 16 |
| Number of Words per Bank | 64M |
| Number of Bits/Word (bit) | 32 |
| Number of I/O Lines (bit) | 32 |
| Maximum Operating Temperature (°C) | 95 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 1.95|1.17 |
| Minimum Operating Supply Voltage (V) | 1.7|1.06 |
| Typical Operating Supply Voltage (V) | 1.8|1.1 |
| Description |
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